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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC3265 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC3265 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  2SC3265 2003-03-25 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications · High DC current gain: hFE (1) = 100~320 · Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) · Complementary to 2SA1298 Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 25 ¾ ¾ V Emitter-base breakdown voltage V (BR) EBO IE = 0.1 mA, IC = 0 5 ¾ ¾ V hFE (1) (Note) VCE = 1 V, IC = 100 mA 100 ¾ 320 DC current gain hFE (2) VCE = 1 V, IC = 800 mA 40 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 20 mA ¾ ¾ 0.4 V Base-emitter voltage VBE VCE = 1 V, IC = 10 mA 0.5 ¾ 0.8 V Transition frequency fT VCE = 5 V, IC = 10 mA ¾ 120 ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 13 ¾ pF Note: hFE (1) classification O: 100~200, Y: 160~320 Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) |
Аналогичный номер детали - 2SC3265 |
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Аналогичное описание - 2SC3265 |
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