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2SC2983 датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали 2SC2983
подробное описание детали  Power Amplifier Applications Driver Stage Amplifier Applications
PDF  4 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2983 датащи(HTML) 3 Page - Toshiba Semiconductor

  2SC2983 Datasheet HTML 1Page - Toshiba Semiconductor 2SC2983 Datasheet HTML 2Page - Toshiba Semiconductor 2SC2983 Datasheet HTML 3Page - Toshiba Semiconductor 2SC2983 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC2983
2005-02-01
3
Safe Operating Area
VCE (sat) – IC
fT – IC
IC – VCE
hFE – IC
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (mA)
Collector current IC (mA)
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
PC – Ta
Common emitter
VCE = 5 V
10
0.003
30
50
100
300
500
0.01
0.03
0.1
0.3
1
Tc = 100°C
−25
25
Common emitter
Tc = 25°C
0
0
1.0
0.2
0.4
0.6
0.8
2
4
6
8
10
12
14
1.2
IB = 2 mA
6
8
12
20
4
0
0.003
0.02
0.01
0.03
0.1
0.3
1
0.05
0.1
0.3
0.5
1
Common emitter
IC/IB = 10
Tc = 100°C
−25
25
Common emitter
VCE = 10 V
Tc = 25°C
10
−5
−10
−30
−100
−300
−1000
30
50
100
300
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
0
0
24
20
40
60
80
100
120
140
160
4
8
12
16
20
(1)
(2)
(3)
1
IC max
(continuous)
IC max (pulsed)*
DC operation
Tc = 25°C
VCEO max
100
300
30
3
10
0.01
0.03
0.05
0.1
0.3
0.5
1
3
5
1 ms*
10 ms
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.



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