2SC2883

2004-07-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2883

Audio Frequency Amplifier Applications

• Suitable for output stage of 3 watts amplifier

• Small flat package

• Complementary to 2SA1203

Characteristics

Symbol

Rating

Unit

Collector-base voltage

30

V

Collector-emitter voltage

30

V

Emitter-base voltage

5

V

Collector current

1.5

A

Base current

0.3

A

500

Collector power dissipation

(Note 1)

1000

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Mounted on a ceramic substrate (250 mm

Unit: mm

PW-MINI

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)