2SC2873 datasheet(1/5 Pages) TOSHIBA

номер детали	2SC2873

подробное описание детали	Power Amplifier Applications Power Switching Applications

PDF	5 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2SC2873

2004-07-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC2873

Power Amplifier Applications

Power Switching Applications

• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)

• High-speed switching time: tstg = 1.0 µs (typ.)

• Small flat package

• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

• Complementary to 2SA1213

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

2

A

Base current

IB

0.4

A

PC

500

Collector power dissipation

PC

(Note 1)

1000

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note 1: Mounted on a ceramic substrate (250 mm

2 × 0.8 t)

Unit: mm

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)

Аналогичный номер детали - 2SC2873

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC2873	187Kb / 4P	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
Guangdong Kexin Industr...	2SC2873	63Kb / 2P	Silicon PNP Epitaxial Type
SeCoS Halbleitertechnol...	2SC2873	219Kb / 3P	NPN Silicon Epitaxial Planar Transistor
Shenzhen Jin Yu Semicon...	2SC2873	413Kb / 1P	TRANSISTOR (NPN)
SHENZHEN YONGERJIA INDU...	2SC2873	163Kb / 2P	TRANSISTOR (NPN)

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