2SC2710

2003-03-25

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2710

For Audio Amplifier Applications

· Complementary to 2SA1150

==== 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

35

V

Collector-emitter voltage

30

V

Emitter-base voltage

5

V

Collector current

800

mA

Base current

160

mA

Collector power dissipation

300

mW

Junction temperature

150

°C

Storage temperature range

-55~150

°C

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

¾

¾

0.1

mA

Emitter cut-off current

¾

¾

0.1

mA

Collector-emitter breakdown voltage

30

¾

¾

V

(Note)

100

¾

320

DC current gain

35

¾

¾

Collector-emitter saturation voltage

¾

¾

0.5

V

Base-emitter voltage

0.5

¾

0.8

V

Transition frequency

¾

120

¾

MHz

Collector output capacitance

¾

13

¾

pF

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-4E1A

Weight: 0.13 g (typ.)