iC-WJB

2.7 V LASER DIODE DRIVER

Rev E1, Page 4/12

ELECTRICAL CHARACTERISTICS

Operating Conditions: VCC = 2.7...6 V, RSET = 2.7...27 kΩ, I(AMD) = 0.15...1.5 mA, Tj = -25...125 °C, unless otherwise noted.

Item

Symbol

Parameter

Conditions

Unit

No.

Min.

Typ.

Max.

Total Device

001

VCC

Permissible Supply Voltage

Range

2.7

6

V

002

Idc(VCC)

Supply Current in VCC

RSET = 5 kΩ, IN = hi, Idc(KLD) = 40 mA

4

7

13

mA

003

I0(VCC)

Standby Supply Current in VCC

REST= 5 kΩ, IN = lo, Tj = 27 °C

5

mA

004

Iav(VCC)

Supply Current in VCC (average

value)

Ipk(KLD) = 80 mA, f(IN) = 200 kHz ±20 %,

twhi / twlo = 1

9

15

mA

005

tp(IN-KLD) Delay Time Pulse Edge V(IN) to

I(KLD)

IN(hi ↔ lo), V(50 %) : I(50 %)

65

135

ns

006

Pcon

Power Consumption

VCC = 3 V, V(KLD) ≈ 0.6 V, RSET = 5 kΩ,

Idc(KLD) = 40 mA

50

mW

007

Vc()hi

Clamp Voltage hi at VCC, IN,

AMD, KLD, CI, CWD, ISET

I() = 2 mA, other pins open

6.2

10

V

Tj = 27 °C

7.5

V

Driver

101

Vs(KLD)

Saturation Voltage at KLD

IN = hi, I(KLD) = 80 mA

0.3

V

Tj = 27 °C

0.11

V

102

Vs(KLD)

Saturation Voltage at KLD

IN = hi, I(KLD) = 100 mA

0.4

V

103

I0(KLD)

Leakage Current in KLD

IN = lo, V(KLD) = VCC

10

µA

104

V(AMD)

Voltage at AMD

I(AMD) = 1.5 mA

0.4

1.0

V

Tj = 27 °C

0.84

V

105

tr

Current Rise Time in KLD

Imax(KLD) = 20...80 mA, Ip(): 10 → 90 %

100

ns

Tj = 27 °C

30

ns

106

tf

Current Fall Time in KLD

Imax(KLD) = 20...80 mA, Ip(): 90 % → 10 %

100

ns

Tj = 27 °C

20

ns

107

CR1()

Current Ratio I(AMD)/I(ISET)

I(CI) = 0, closed control loop;

RSET = 2.7..27 kΩ

2.4

3

3.8

RSET = 27..330 kΩ

2.4

3.6

5.4

108

CR2()

Current Ratio I(AMD)/I(CI)

V(CI) = 1...2 V, ISET open

2.7

3

3.3

109

TC1()

Temperature Coefficient of

Current Ratio I(AMD)/I(ISET)

I(CI) = 0, closed control loop;

RSET = 2.7...27 kΩ

0.01

% / °C

RSET = 27...330 kΩ

-0.1

-0.25

% / °C

Input IN

201

Vt()hi

Threshold hi

45

70

%VCC

202

Vt()lo

Threshold lo

40

65

%VCC

203

Vt()hys

Hysteresis

20

mV

Tj = 27 °C

65

mV

204

Rin

Pull-Down Resistor

V(IN) = -0.3 V...VCC

4

16

kΩ

Tj = 27 °C

10

kΩ

205

V0()

Open-loop Voltage

I(IN) = 0

0.1

V

Reference und Thermal Shutdown

301

V(ISET)

Voltage at ISET

1.16

1.28

V

Tj = 27 °C

1.22

V

302

CR()

Current Ratio I(CI)/I(ISET)

V(CI) = 1...2 V, I(AMD) = 0

0.9

1

1.12

303

RSET

Permissible Resistor at ISET

(Control Set-up Range)

2.7

330

kΩ

304

Toff

Thermal Shutdown Threshold

125

150

°C

305

Thys

Thermal Shutdown Hysteresis

10

40

°C

Power-Down and Watchdog

401

VCCon

Turn-on Threshold VCC

2.4

2.7

V

Tj = 27 °C

2.6

V

402

VCCoff

Undervoltage Threshold at VCC

2.3

2.63

V

Tj = 27 °C

2.5

V

403

VCChys

Hysteresis

VCChys = VCCon − VCCoff

70

100

150

mV

404

Vs(CI)off

Saturation Voltage at CI with

undervoltage

I(CI) = 300 µA, VCC < VCCoff

1.5

V