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DMS3019SSD датащи(PDF) 1 Page - Diodes Incorporated |
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DMS3019SSD датащи(HTML) 1 Page - Diodes Incorporated |
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1 / 10 page ![]() DMS3019SSD Document number: DS35053 Rev. 2 - 2 1 of 10 www.diodes.com October 2010 © Diodes Incorporated DMS3019SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(on) – minimizes conduction loss • Low VSD – reducing the losses due to body diode construction • Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot- through or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Weight: 0.072 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging DMS3019SSD-13 SO-8 2500 / Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 S2/D1 G2 S1 S2/D1 S2/D1 D2 G1 Top View Top View Internal Schematic Top View Logo Part no. Year: “09” = 2009 Week: 01 ~ 53 1 4 8 5 S3019SD YY WW D 1 S 1 G 1 D 2 S 2 G 2 N-Channel MOSFET N-Channel MOSFET + Integrated Schottky Diode Q1 Q2 |
Аналогичный номер детали - DMS3019SSD |
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Аналогичное описание - DMS3019SSD |
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