DMS3017SSD

Document number: DS35052 Rev. 2 - 2

3 of 10

www.diodes.com

October 2010

© Diodes Incorporated

DMS3017SSD

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

100

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

1.0

-

2.5

V

Static Drain-Source On-Resistance

-

8.5

9.5

12

15

mΩ

Forward Transfer Admittance

-

18

-

S

Diode Forward Voltage

-

0.45

0.60

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

-

1276

-

pF

f = 1.0MHz

Output Capacitance

-

160

-

Reverse Transfer Capacitance

-

136

-

Gate Resistance

-

1.48

2.7

Ω

-

14.3

-

nC

-

30.6

-

Gate-Source Charge

-

3.4

-

Gate-Drain Charge

-

4.3

-

Turn-On Delay Time

-

15.8

-

ns

Turn-On Rise Time

-

27.8

-

Turn-Off Delay Time

-

29.7

-

Turn-Off Fall Time

-

13.6

-

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

10

15

20

25

30

5

V

= 2.5V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.5V

GS

V

= 4.0V

GS

V

= 10V

GS

0

5

10

15

20

0

0.5

1

1.5

2

2.5

3

3.5

4

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

V

= 85°C

GS

V

= 125°C

GS

V

= 25°C

GS

V

= -55°C

GS

V

= 150°C

GS

V

= 5V

DS