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2SA1869 датащи(PDF) 3 Page - Toshiba Semiconductor |
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2SA1869 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SA1869 2006-11-09 3 Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (mA) VCE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Ambient temperature Ta (°C) PC – Ta Collector-emitter voltage VCE (V) Safe Operating Area IB = −5 mA −10 −15 −20 −25 −30 −40 −50 −3 0 0 Common emitter Tc = 25°C −2 −4 −6 −8 −10 −1 −2 −25 25 Tc = 100°C 1000 3 −0.01 Common emitter VCE = −2 V −0.1 −1 −10 5 10 30 50 100 300 500 −25 25 Tc = 100°C −3 −0.01 −0.01 −0.1 −1 −10 −0.03 −0.05 −0.1 −0.3 −0.5 −1 Common emitter IC/IB = 10 −3 0 0 −25 25 Tc = 100°C −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 −0.5 −1 −1.5 −2 −2.5 Common emitter VCE = 2 V 12 0 0 25 50 75 100 125 150 175 200 2 4 6 8 10 (2) (1) (1) Tc = Ta Infinite heat sink (2) No heat sink IC max (continuous) 1 ms* 10 ms* 100 ms* DC operation Tc = 25°C *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −10 −0.03 −1 −10 −100 −500 −0.05 −0.1 −0.3 −0.5 −1 −3 −5 IC max (pulsed)* |
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