AP5727

BIAS POWER SUPPLY FOR OLED

SUB DISPLAY AND TFT-LED

AP5727

Document number: DS31887 Rev. 2 - 2

3 of 10

www.diodes.com

January 2011

© Diodes Incorporated

Symbol

Parameter

Rating

Unit

VIN Pin Voltage

-0.3~7

V

SW Voltage

-0.3~32

V

Feedback Pin Voltage

-0.3~7

V

EN

EN

-0.3~7

V

Maximum Junction Temperature

150

°C

Lead Temperature

300

°C

Storage Temperature Range

-65 to +150

°C

Caution: The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be

exceeded under any condition.

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

Input Voltage

2.7

5.5

V

Operating Junction Temperature

-40

125

°C

Operating Ambient Temperature

-40

85

°C

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

System Supply Input

Operating Input Voltage

2.7

-

5.5

V

UVLO

Under Voltage Lockout

-

2.2

2.4

V

Under Voltage Lockout Hysteretic

-

85

-

mV

Quiescent Current

FB=1.3V, No Switching

-

500

-

μA

Shutdown Current

-

0.1

1

μA

Oscillator

Operation Frequency

1

1.2

1.4

MHz

Dmax

Maximum Duty Cycle

86

90

-

%

Reference Voltage

Feedback Voltage

1.225

1.25

1.275

V

FB Pin Bias Current

10

45

100

nA

MOSFET

On Resistance of MOSFET

-

0.95

1.2

Ω

Switching Current Limit

Normal Operation

-

750

-

mA

Control and Protection

EN

Voltage High

ON

1.5

-

-

V

EN

Voltage Low

OFF

-

-

0.4

V

EN Pin Pull Low Current

-

4

6

μA

Thermal Resistance Junction-to-

Ambient

SOT25 (Note 2)

162

Thermal Resistance Junction-to-

Case

SOT25 (Note 2)

36

Notes:

2. Test condition for SOT25: Device mounted on FR-4 substrate, single-layer PC board, 2oz copper, with minimum recommended pad layout