Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

December 2007

Rev 1

1/15

15

PD84008-E

PD84008S-E

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Features

@ 870 MHz / 7.5 V

directive

Description

The PD84008-E is a common source N-channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 13.6 V in common source mode at

frequencies of up to 1 GHz. PD84008-E boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

PD84008-E’s superior linearity performance

makes it an ideal solution for portable radio

applications.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Part number

Package

Packing

PD84008-E

PowerSO-10RF (formed lead)

Tube

PD84008S-E

PowerSO-10RF (straight lead)

Tube

PD84008TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD84008STR-E

PowerSO-10RF (straight lead)

Tape and reel

www.st.com