M48Z2M1V datasheet(15/20 Pages) STMICROELECTRONICS

15 / 20 page

M48Z2M1Y, M48Z2M1V

DC and AC parameters

Doc ID 5135 Rev 5

15/20

Figure 10.

Power down/up mode AC waveforms

Table 9.

Power down/up AC characteristics

Table 10.

Power down/up trip points DC characteristics

Symbol

Parameter(1)

Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where

noted).

Min

Max

Unit

tER

E recovery time

120

(2)

VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring

until 200 µs after VCC passes VPFD (min).

VPFD (max) to VPFD (min) VCC fall time

300

µs

tFB

(3)

VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

VPFD (min) to VSO VCC fall time

M48Z2M1Y

µs

M48Z2M1V

150

µs

VPFD (min) to VPFD (max) VCC rise time

µs

tWP

Write protect time from VCC = VPFD

M48Z2M1Y

150

µs

M48Z2M1V

250

µs

Symbol

Parameter(1)(2)

All voltages referenced to VSS.

Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where

noted).

Min

Typ

Max

Unit

VPFD

Power-fail deselect voltage

M48Z2M1Y

4.2

4.3

4.5

M48Z2M1V

2.8

2.9

3.0

VSO

Battery backup switchover voltage

M48Z2M1Y

3.0

M48Z2M1V

2.45

tDR

(3)

At 25 °C; VCC = 0 V.

Expected data retention time

YEARS

AI01031

VCC

(PER CONTROL INPUT)

OUTPUTS

DON'T CARE

HIGH-Z

tFB

tRB

tWP

tDR

VALID

(PER CONTROL INPUT)

RECOGNIZED

VPFD (max)

VPFD (min)

VSO

tER

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