M48Z02 datasheet(12/21 Pages) STMICROELECTRONICS

номер детали	M48Z02

подробное описание детали	5 V, 16 Kbit (2 Kb x 8) ZEROPOWER® SRAM

PDF	21 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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12 / 21 page

Operation modes

M48Z02, M48Z12

12/21

Doc ID 2420 Rev 7

2.4

VCC noise and negative going transients

ICC transients, including those produced by output switching, can produce voltage

fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if

capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the

bypass capacitors will be released as low going spikes are generated or energy will be

absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in

Figure 8) is recommended in order to provide the needed filtering.

In addition to transients that are caused by normal SRAM operation, power cycling can

generate negative voltage spikes on VCC that drive it to values below VSS by as much as

one volt. These negative spikes can cause data corruption in the SRAM while in battery

backup mode. To protect from these voltage spikes, STMicroelectronics recommends

connecting a Schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS).

Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is

recommended for surface mount.

Figure 8.

Supply voltage protection

AI02169

VCC

0.1µF

DEVICE

VCC

VSS

M48Z02 датащи(PDF) 12 Page - STMicroelectronics