N-CHANNEL

POWER MOSET

IRF330 / 2N6760

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9142

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0

ID = 1.0mA

400

V

J

T

VDSS

B

∆

∆

Temperature Coefficent of

Breakdown Voltage

Reference

to 25°C

ID = 1.0mA

0.46

V/°C

VGS = 10V

ID = 3.5A

(4)

1.0

RDS(on)

Static Drain-Source

On-State Resistance

VGS = 10V

ID = 5.5A

(4)

1.22

Ω

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250µA

2

4

V

gfs

Forward Transconductance

VDS ≥ 15V

I DS = 3.5A

(4)

2.9

S(Ʊ)

VGS = 0

VDS = 0.8BVDSS

25

IDSS

Zero Gate Voltage

Drain Current

TJ = 125°C

250

µA

IGSS

Forward Gate-Source

Leakage

VGS = 20V

100

IGSS

Reverse Gate-Source

Leakage

VGS = -20V

-100

nA

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0

620

Coss

Output Capacitance

VDS = 25V

200

Crss

Reverse Transfer

Capacitance

f = 1.0MHz

75

pF

Qg

Total Gate Charge

VGS = 10V

17

39

Qgs

Gate-Source Charge

ID = 5.5A

2

6

Qgd

Gate-Drain Charge

VDS = 0.5BVDSS

8

20

nC

td(on)

Turn-On Delay Time

30

tr

Rise Time

40

td(off)

Turn-Off Delay Time

80

tf

Fall Time

VDD = 200V

ID = 5.5A

RG = 7.5Ω

35

ns

SOURCE-DRAIN DIODE CHARACTERISTICS

IS

Continuous Source Current

5.5

ISM

Pulse Source Current

(1)

22

A

IS = 5.5A

TJ = 25°C

VSD

Diode Forward Voltage

VGS = 0

(4)

1.4

V

trr

Reverse Recovery Time

IF = 5.5A

TJ = 25°C

700

ns

Qrr

Reverse Recovery Charge

VDD ≤ 50V

di/dt = 100A/

µs

(4)

6.2

µC