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BUX80 датащи(PDF) 1 Page - Seme LAB |
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BUX80 датащи(HTML) 1 Page - Seme LAB |
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1 / 2 page ![]() BUX80 VCES Collector – Emitter Voltage VBE = 0 VCER Collector – Emitter Voltage RBE = 50Ω VCEO Collector – Emitter Voltage IB = 0 VEBO Emitter – Base Voltage IC = 0 IC Collector Current ICM Peak Collector Current IB Base Current Ptot Total Power Dissipation Tcase = 40°C TSTG Storage Temperature Range TJ Maximum Junction Temperature 800V 500V 400V 10V 10A 15A 5A 100W -65 to +150°C +150°C MECHANICAL DATA Dimensions in mm (inches) 12 3 (case) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated) TO–204AA (TO–3) PIN 1 — Base PIN 2 — Emitter Case is Collector. Applications The BUX80 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. This device is especially suitable for switching–control amplifiers, power gates, switching regulators, power-switch- ing circuits converters, inverters and control circuits. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Document Number 6049 Issue 1 |
Аналогичный номер детали - BUX80 |
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Аналогичное описание - BUX80 |
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