SILICON EPITAXIAL

NPN TRANSISTOR

BFT29 / BFT30 / BFT31

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8963

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

BFT29

90

BFT30

70

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 10µA

IE = 0

BFT31

60

V

BFT29

80

BFT30

60

V(BR)CEO

(1)

Collector-Emitter Breakdown

Voltage

IC = 10mA

IB = 0

BFT31

50

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10µA

IC = 0

5

V

ICBO

Collector-Cut-Off Current

VCB = Rated VCEO, IE = 0

100

nA

BFT29

25

BFT30

45

IC = 1.0mA

VCE = 10V

BFT31

45

BFT29

30

BFT30

50

IC = 10mA

VCE = 10V

BFT31

50

BFT29

50

250

BFT30

75

250

IC = 100mA

VCE = 10V

BFT31

100

300

BFT29

30

BFT30

50

IC = 500mA

VCE = 10V

BFT31

50

BFT29

20

BFT30

25

hFE

(1)

Forward-Current Transfer Ratio

IC = 1.0A

VCE = 10V

BFT31

25

BFT29

0.95

BFT30

0.75

IC = 500mA

IB = 50mA

BFT31

0.75

BFT29

1.6

BFT30

1.0

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 1.0A

IB = 100mA

BFT31

1.0

IC = 500mA

IB = 50mA

1.1

VBE(sat)

(1)

Base-Emitter Saturation Voltage

IC = 1.0A

IB = 100mA

2.0

V