2STF1550 datasheet(3/8 Pages) STMICROELECTRONICS

номер детали	2STF1550

подробное описание детали	Low voltage high performance NPN power transistors

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производитель	STMICROELECTRONICS [STMicroelectronics]

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2STF1550 - 2STN1550

Electrical characteristics

3/8

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 50 V

0.1

μA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 4 V

0.1

μA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 μA50

V(BR)CEO

(1)

Pulsed duration = 300

μs, duty cycle ≤1.5%

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100 μA5

hFE

(1)

DC current gain

IC = 0.5 A

VCE = 2 V

IC = 2 A

VCE = 2 V

IC = 3 A

VCE = 2 V

IC = 5 A

VCE = 5 V

135

100

250

400

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 3 A

IB = 300 mA

0.26

0.45

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 3 A

IB = 300 mA

1.2

CCBO

Collector-base

capacitance (IE = 0)

VCB = 10 V, f = 1 MHz

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = 1.5 A

VCC = 10 V

IB1 = -IB2 = 150 mA

700

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