SILICON NPN TRANSISTOR

2N3700CSM

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 5594

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 30mA

IB = 0

80

V

VEB = 7.0V

IC = 0

10

µA

IEBO

Emitter-Base Cut-Off Current

VEB = 5.0V

IC = 0

10

ICES

Collector-Emitter Cut-Off

Current

VCE = 90V

10

nA

TA = 150°C

5

ICBO

Collector-Base Cut-Off Current

VCB = 140V

IE = 0

10

µA

IC = 0.10mA

VCE = 10V

50

IC = 10mA

VCE = 10V

90

IC = 150mA

VCE = 10V

100

300

TA = -55°C

40

IC = 500mA

VCE = 10V

50

hFE

(1)

DC Current Gain

IC = 1.0A

VCE = 10V

15

IC = 150mA

IB = 15mA

0.2

VCE(sat)

(1)

Collector-Emitter

Saturation Voltage

IC = 500mA

IB = 50mA

0.5

VBE(sat)

(1)

Base-Emitter

Saturation Voltage

IC = 150mA

IB = 15mA

1.1

V

DYNAMIC CHARACTERISTICS

IC = 50mA

VCE = 10V

|hfe|

Magnitude of Small-Signal

Short-Circuit Current Gain

f = 20MHz

4

5

20

IC = 1.0mA

VCE = 5.0V

hfe

Small-Signal Short-Circuit

Current Gain

f = 1.0KHz

80

400

VCB = 10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

12

pF

VEB = 0.5V

IC = 0

Cibo

Input Capacitance

f = 1.0MHz

60

pF

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%