82566 Gigabit Platform LAN Connect Networking Silicon Datasheet

17

3.5.2.6

PNP Transistor Specification for 1.0V DC LVR

3.5.3

Crystal

Table 21 lists the recommended crystal specifications for operation with the 82566.

Table 20. PNP Specification for 1.0V DC LVR

PNP

Connection

Description

Symbol

Min

Typ

Max

Units

PNP

Transistor for

1.0V DC LVR

a. Vce = -1.0 V DC; Ic = 0.5 A; T = 25

β

60

-

400

-

Transition Frequency

fT

-

40

-

MHz

Thermal Resistance Junction to

b. The thermal resistance feature depends on the PNP package along with the board layout including: number of layers, layer

thickness, copper area for collector pad, and component locations.

Rt_ja

-

-

60

°C/W

Maximum Operation Junction

Temperature

Tj_max

-

-

150

°C

Maximum Collector Current

Ic_max

-

-

1

A

c.

Ta = 70

Pmax

-

-

1.1

W

Table 21. Crystal Specifications (Sheet 1 of 2)

Parameter Name

Symbol

Recommended Value

Max/Min Range

Conditions

Frequency

25.000 MHz

-

@25 °C

Vibration mode

-

Fundamental

-

-

Cut

-

AT

-

-

Operating/Calibration

Mode

-

Parallel

-

-

Frequency Tolerance

±30 ppm

a

@25 °C

Temperature Tolerance

±30 ppm

a

-

Operating Temperature

-20 to +70 °C

a

-

Non Operating

Temperature

-40 to +90 °C

-

-

Equivalent Series

Resistance (ESR)

10

Ω

50

Ω

@25 MHz

Load Capacitance

20 pF (max 24 pF)

a

-

Shunt Capacitance

6 pF

a

-

Pullability from Nominal

Load Capacitance

15 ppm/pF max

-

-

Max Drive Level

500

µW-

-

Insulation Resistance

IR

500 M

Ω min

@ 100V DC

Aging

±5 ppm per year

±5 ppm per year

-