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Data Sheet

4.9-5.8 GHz High-Linearity Power Amplifier

SST11LP12

©2010 Silicon Storage Technology, Inc.

S71278-04-000

12/10

ELECTRICAL SPECIFICATIONS

The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current spec-

ifications. Refer to Figures 3 through 8 for the RF performance.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Surface Mount Solder Reflow Temperature....................................... 260°C for 10 seconds

Range

Ambient Temp

Industrial

-40°C to +85°C

3.3V

TABLE 2: DC Electrical Characteristics

Symbol

Parameter

Min.

Typ

Max.

Unit

Test Conditions

Supply Voltage at pins 4, 14, 15, 16

2.7

3.3

3.6

V

400

mA

150

mA

Shut down current

<1.0

µA

Reference Voltage for recommended application

2.85

3.0

V

T2.0 1278