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EMI7204MU датащи(PDF) 2 Page - ON Semiconductor

номер детали EMI7204MU
подробное описание детали  Four-Six-Eight -Channel EMI Filter with Integrated ESD Protection
PDF  7 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

EMI7204MU датащи(HTML) 2 Page - ON Semiconductor

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EMI7204MU, EMI7206MU, EMI7208MU
http://onsemi.com
2
Figure 3. Pin Diagram
(Bottom View)
12 3 4
85
6
7
EMI7204MU
GND
12 3 4 5 6
7
8
9
10
11
12
GND
EMI7208MU
12 3 4 5 6 7 8
9
10
11
12
13
14
15
16
GND
EMI7206MU
Table 1. FUNCTIONAL PIN DESCRIPTION
Filter
Device Pins
Description
EMI7204MU
EMI7206MU
EMI7208MU
Filter 1
1 & 8
1 & 12
1 & 16
Filter + ESD Channel 1
Filter 2
2 & 7
2 & 11
2 & 15
Filter + ESD Channel 2
Filter 3
3 & 6
3 & 10
3 & 14
Filter + ESD Channel 3
Filter 4
4 & 5
4 & 9
4 & 13
Filter + ESD Channel 4
Filter 5
5 & 8
5 & 12
Filter + ESD Channel 5
Filter 6
6 & 7
6 & 11
Filter + ESD Channel 6
Filter 7
7 & 10
Filter + ESD Channel 7
Filter 8
8 & 9
Filter + ESD Channel 8
Ground Pad
GND
GND
GND
Ground
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
ESD IEC61000−4−2 (Contact Discharge)
VPP
$16
kV
ESD Human Body Model MIL−STD−−883
VPP
$16
kV
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature
TSTG
−65 to 150
°C
Maximum Lead Temperature for Soldering Purpose (1.8 in from case for 10 seconds)
TL
260
°C
Current per inductor
IC
30
mA
DC package power rating
Pp
500
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25° unless otherwise noted).
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum reverse Working Voltage
VRWM
5.0
V
Breakdown Voltage Positive Clamp
VBR
IR = 1.0 mA
5.6
6.8
9.0
V
Breakdown Voltage Negative Clamp
VBR
IR = 1.0 mA
−1.5
−0.08
−0.04
V
Leak Current
IR
VRWM = 3.3 V
0.1
1.0
mA
Resistance
RA
10
W
Inductance
L
17
nH
Diode Capacitance
C1
VR = 2.5 V, f = 1.0 MHz,
30 mVAC
12
pF
Line Capacitance
Ct
18.8
24.2
28.2
pF
3dB Cut−Off Frequency (Note 1)
f3dB
Above this frequency,
appreciable attenuation
occurs
250
MHz
Stop Band Attenuation
800 MHz to 6.0 GHz
23
dB
1. 50 W source and 50 W load termination.



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