IPD60R385CP_09 datasheet(1/10 Pages) INFINEON

номер детали	IPD60R385CP

подробное описание детали	CoolMOS Power Transistor

PDF	10 Pages

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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IPD60R385CP

CoolMOS

® Power Transistor

Features

• Worldwide best R ds,on in TO252

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching SMPS topologies

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=3.4 A, V DD=50 V

227

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=3.4 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...480 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

±30

83

-55 ... 150

0.3

3

50

±20

Value

9.0

5.7

27

V DS @ Tj,max

650

V

R DS(on),max

0.385

Ω

Q g,typ

17

nC

Product Summary

Type

Package

Ordering Code

Marking

IPD60R385CP

PG-TO252

SP000307381

6R385P

PG-TO252

Rev. 2.2

page 1

2009-04-15

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IPD60R385CP датащи(PDF) 1 Page - Infineon Technologies AG

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