A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/2

Specifications are subject to change without notice.

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BV

CBO

65

V

BV

CER

65

V

BV

EBO

3.0

V

I

CBO

12

mA

h

FE

20

120

---

P

G

ηηηη

C

f = 960 to 1215 MHz

Pulse Width = 10

µS

Duty Cycle = 10%

90

8.4

38

100

44

W

dB

%

PACKAGE - .400 x .400 2NLFL

1 = COLLECTER

2 & 4 = BASE

3 = EMITTER

RF POWER TRANSISTOR

AM0912-080

DESCRIPTION:

The

Base Transistor Designed for DME,

TACAN and IFF Pulse Power Amplifier

Applications.

FEATURES INCLUDE:

•••• Gold Metallization

•••• Hermetic Package

•••• Input/Output Matching

MAXIMUM RATINGS

7.0 A

50 V

P

DISS

-65

-65

θθθθ

JC

0.80