A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

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Specifications are subject to change without notice.

SYMBOL

MINIMUM TYPICAL MAXIMUM

UNITS

16

V

36

V

4.0

V

10

100

---

f = 1.0 MHz

390

pF

PG

ηC

f = 175 MHz

6.4

60

6.8

70

dB

%

f = 175 MHz

---

1.0 + j1.5

---

Ω

f = 175 MHz

---

1.2 + j1.8

---

Ω

NPN SILICON RF POWER TRANSISTOR

2SC2782

DESCRIPTION:

The

silicon NPN transistor. Designed primarily

for VHF power amplifer application up

to175 MHz band.

FEATURES:

• 175 MHz 12.5 V

• P

• Omnigold™ Metalization System

• Common Emitter configuration

MAXIMUM RATINGS

20 A

36 V

16 V

4.0 V

-65 °C to +175 ° C

-65 °C to +175 °C

θ

JC

0.68 °C/W

PACKAGE STYLE .500 6L FLG

1 = Collecttor 2 = Base 3&4 = Emitter

MIN IMU M

inches / m m

.490 / 12.45

.210 / 5.33

.003 / 0.08

B

C

D

E

F

G

A

MA XIM U M

.220 / 5.59

.007 / 0.18

.510 / 12.95

inches / m m

.725 / 18.42

H

DIM

K

L

I

J

.970 / 24.64

.980 / 24.89

.170 / 4.32

N

M

.120 / 3.05

.135 / 3.43

.150 / 3.43

.160 / 4.06

.125 / 3.18

.090 / 2.29

.105 / 2.67

.285 / 7.24

.150 / 3.81

.045 / 1.14

E

F

.725/18,42

I

G

J

K

L

M

A

D

C

B

2x Ø N

FU LL R

H

.835 / 21.21

.865 / 21.97

.210 / 5.33

.200 / 5.08

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