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1998

©

Document No. D14865EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SD2162

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET

2002

The 2SD2162 is a Darlington power transistor that can directly drive

from the IC output.

This transistor is ideal for motor drivers and

solenoid drivers in such as OA and FA equipment.

In

addition,

a

small

resin-molded

insulation

type

package

contributes to high-density mounting and reduction of mounting cost.

FEATURES

• Full mold package that does not require an insulating board or

insulation bushing

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

150

V

Collector to emitter voltage

100

V

Emitter to base voltage

7.0

V

Collector current (DC)

+8.0,

−5.0

A

Collector current (pulse)

PW

≤ 10 ms,

duty cycle

≤ 50%

+12,

−8.0

A

Base current (DC)

0.8

A

°C

25

W

Total power dissipation

°C

2.0

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

ORDERING INFORMATION

Ordering Name

Package

2SD2162

Isolated TO-220

(Isolated TO-220)

INTERNAL EQUIVALENT CIRCUIT

1. Base

2. Collector

3. Emitter