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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6716MPBF датащи(PDF) 1 Page - International Rectifier |
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IRF6716MPBF датащи(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 04/30/09 IRF6716MPbF IRF6716MTRPbF Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.65mH, RG = 25Ω, IAS = 32A. Notes: DirectFET ISOMETRIC Description The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. MX 0 102030405060 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 20V VDS= 13V ID= 32A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 32 Max. 31 180 320 ±20 25 39 330 VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.2m Ω@10V 2.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 39nC 12nC 5.3nC 28nC 27nC 1.9V 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 6 ID = 40A TJ = 25°C TJ = 125°C SQ SX ST MQ MX MT MP Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) DirectFET Power MOSFET l RoHs Compliant and Halogen Free l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested PD - 97274C |
Аналогичный номер детали - IRF6716MPBF_09 |
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Аналогичное описание - IRF6716MPBF_09 |
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