MRF9060LSR1

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of this device

make it ideal for large-signal, common-source amplifier applications in 26 volt

base station equipment.

• Typical Two-Tone Performance at 945 MHz, 26 Volts

Output Power — 60 Watts PEP

Power Gain — 17 dB

Efficiency — 40%

IMD — -31 dBc

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW

Output Power

Features

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

- 0.5, +65

Vdc

Gate-Source Voltage

- 0.5, + 15

Vdc

Derate above 25°C

219

1.25

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

0.8

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M1 (Minimum)

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Document Number: MRF9060-1

Rev. 10, 9/2008

Freescale Semiconductor

Technical Data

MRF9060LSR1

945 MHz, 60 W, 26 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFET

CASE 360C-05, STYLE 1

NI-360S

© Freescale Semiconductor, Inc., 2008. All rights reserved.