MRF9080LR3 datasheet(2/11 Pages) FREESCALE

номер детали	MRF9080LR3

подробное описание детали	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PDF	11 Pages

Scroll/Zoom	100%

производитель	FREESCALE [Freescale Semiconductor, Inc]

домашняя страница	http://www.freescale.com

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RF Device Data

Freescale Semiconductor

MRF9080LR3

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vds, VGS = 0)

IDSS

—

μAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 )

IGSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 μAdc)

VGS(th)

2.0

—

4.0

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 700 mAdc)

VGS(Q)

—

3.7

—

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 2 Adc)

VDS(on)

—

0.19

0.4

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 6 Adc)

gfs

—

8.0

—

Dynamic Characteristics (1)

Output Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)

Coss

—

Reverse Transfer Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)

Crss

—

2.9

—

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Power Output, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)

P1dB

—

Common-Source Amplifier Power Gain @ 70 W (Min)

(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)

Gps

18.5

Drain Efficiency @ Pout = 70 W

(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)

η1

—

Drain Efficiency @ P1dB

(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)

η2

—

Input Return Loss

(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 960 MHz)

IRL

9.5

12.5

—

1. Part is internally input matched.

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