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MRF9030LR1 датащи(PDF) 6 Page - Freescale Semiconductor, Inc

номер детали MRF9030LR1
подробное описание детали  RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
PDF  10 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF9030LR1 датащи(HTML) 6 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF9030LR1
TYPICAL CHARACTERISTICS
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
90
110
130
150
170
190
100
120
140
160
180
200
109
100
8
20
1
−60
60
Gps
η
IMD
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
18
40
16
20
14
0
12
−20
10
−40
10
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
Figure 9. MTTF Factor versus Junction Temperature



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