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TLE6284G датащи(PDF) 11 Page - Infineon Technologies AG

номер детали TLE6284G
подробное описание детали  H-Bridge Driver IC Deactivation of dead time and shoot through protection possible
PDF  16 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE6284G датащи(HTML) 11 Page - Infineon Technologies AG

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Data Sheet TLE6284G
Data Sheet
11
Rev 2.3 2007-01-11
Estimation of power loss within the Driver IC
The power loss within the Driver IC is strongly dependent on the use of the driver and the
external components. Nevertheless a rough estimation of the worst case power loss is pos-
sible. Worst case calculation is:
PLoss = (Qgate*n*const* fPWM + IVS(open))* VVs - PRGate
With:
PLoss = Power loss within the Driver IC
fPWM = Switching freqency
Qgate = Total gate charge of used MOSFETs at 10V VGS
n
= Number of switched MOSFETs
const = Constant considering some leakage current in the driver (about 1.2)
IVS(open) = Current consumption of driver without connected Mosfets during switching
VVS
= Voltage at Vs
PRGate = Power dissipation in the external gate resistors
This value can be reduced dramatically by usage of external gate resistors.
Conditions :
Junction temperature Tj = 25
oC
Number of switched MOSFET n = 2
Power dissipation in the external gate resistors PRGate = 0,2*PLoss
Estimated Power Loss PLOSS within the Driver IC
for different supply voltages Vs
at QG = 100nC @ VGS = 10V
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0
10
203040
5060
PWM Frequency (kHz)
Vs = 8V
Vs = 14V
Vs = 18V
Estimated Power Loss PLOSS within the Driver IC
for different gate charges QG
at supply voltage Vs = 14V
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0
102030
4050
60
PWM Frequency (kHz)
QG = 50nC
QG = 100nC
QG = 200nC



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