 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
FS75R12W2T4 датащи(PDF) 6 Page - Infineon Technologies AG |
|
|
|||||||||||||||||||||||||||||
FS75R12W2T4 датащи(HTML) 6 Page - Infineon Technologies AG |
|
|
6 / 9 page  6 Technische Information / technical information FS75R12W2T4 IGBT-Module IGBT-modules prepared by: DK approved by: MB date of publication: 2009-10-30 revision: 2.3 Vorläufige Daten preliminary data Schaltverluste IGBT-Wechselr. (typisch) Schaltverluste IGBT-Wechselr. (typisch) Schaltverluste IGBT-Wechselr. (typisch) Schaltverluste IGBT-Wechselr. (typisch) switching losses IGBT-Inverter (typical) switching losses IGBT-Inverter (typical) switching losses IGBT-Inverter (typical) switching losses IGBT-Inverter (typical) EÓÒ = f (R•), EÓËË = f (R•) EÓÒ = f (R•), EÓËË = f (R•) EÓÒ = f (R•), EÓËË = f (R•) EÓÒ = f (R•), EÓËË = f (R•) V•Š = ±15 V, I† = 75 A, V†Š = 600 V V•Š = ±15 V, I† = 75 A, V†Š = 600 V V•Š = ±15 V, I† = 75 A, V†Š = 600 V V•Š = ±15 V, I† = 75 A, V†Š = 600 V R• [Â] 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 EÓÒ, TÝÎ = 125°C EÓËË, TÝÎ = 125°C EÓÒ, TÝÎ = 150°C EÓËË, TÝÎ = 150°C Transienter Wärmewiderstand IGBT-Wechselr. Transienter Wärmewiderstand IGBT-Wechselr. Transienter Wärmewiderstand IGBT-Wechselr. Transienter Wärmewiderstand IGBT-Wechselr. transient thermal impedance IGBT-inverter transient thermal impedance IGBT-inverter transient thermal impedance IGBT-inverter transient thermal impedance IGBT-inverter ZÚÌœ™ = f (t) ZÚÌœ™ = f (t) ZÚÌœ™ = f (t) ZÚÌœ™ = f (t) t [s] 0,001 0,01 0,1 1 10 0,01 0,1 1 10 ZÚÌœ™ : IGBT i: rÍ[K/W]: Í[s]: 1 0,032 0,0005 2 0,062 0,005 3 0,312 0,05 4 0,543 0,2 τ Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA) Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA) Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA) Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA) reverse bias safe operating area IGBT-inv. (RBSOA) reverse bias safe operating area IGBT-inv. (RBSOA) reverse bias safe operating area IGBT-inv. (RBSOA) reverse bias safe operating area IGBT-inv. (RBSOA) I† = f (V†Š) I† = f (V†Š) I† = f (V†Š) I† = f (V†Š) V•Š = ±15 V, R•ÓËË = 2.2 Â, TÝÎ = 150°C V•Š = ±15 V, R•ÓËË = 2.2 Â, TÝÎ = 150°C V•Š = ±15 V, R•ÓËË = 2.2 Â, TÝÎ = 150°C V•Š = ±15 V, R•ÓËË = 2.2 Â, TÝÎ = 150°C V†Š [V] 0 200 400 600 800 1000 1200 1400 0 15 30 45 60 75 90 105 120 135 150 165 I†, Modul I†, Chip Durchlasskennlinie der Diode-Wechselr. (typisch) Durchlasskennlinie der Diode-Wechselr. (typisch) Durchlasskennlinie der Diode-Wechselr. (typisch) Durchlasskennlinie der Diode-Wechselr. (typisch) forward characteristic of diode-inverter (typical) forward characteristic of diode-inverter (typical) forward characteristic of diode-inverter (typical) forward characteristic of diode-inverter (typical) IŒ = f (VŒ) IŒ = f (VŒ) IŒ = f (VŒ) IŒ = f (VŒ) VŒ [V] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0 15 30 45 60 75 90 105 120 135 150 TÝÎ = 25°C TÝÎ = 125°C TÝÎ = 150°C |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
