SPP15P10PLG datasheet(1/10 Pages) INFINEON

номер детали	SPP15P10PLG

подробное описание детали	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode

PDF	10 Pages

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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SPP15P10PL G

SPD15P10PL G

SIPMOS® Power-Transistor

Features

• P-Channel

• Enhancement mode

• logic level

• Avalanche rated

• Pb-free lead plating; RoHS compliant

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=-15 A, R GS=25 Ω

mJ

Gate source voltage

V GS

V

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

ESD Class

Soldering temperature

IEC climatic category; DIN IEC 68-1

55/175/56

-55 ... 175

±20

260 °C

1C (1kV to 2kV)

-15

11.3

128

Value

230

-60

V DS

-100

V

R DS(on),max

0.20

Ω

I D

-15

A

Product Summary

PG-TO252-3

PG-TO220-3

Type

Package

Marking

Lead free

Packing

Tape and Reel information

SPP15P10PL G

PG-TO220-3

15P10PL

Yes

Non dry

50 pcs / tube

SPD15P10PL G

PG-TO252-3

15P10PL

Yes

Non dry

1000 pcs / reel

Rev 1.3

page 1

2009-10-27

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SPP15P10PLG датащи(PDF) 1 Page - Infineon Technologies AG

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