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BSC080N03LSG датащи(PDF) 2 Page - Infineon Technologies AG

номер детали BSC080N03LSG
подробное описание детали  OptiMOS?? Power-MOSFET
PDF  10 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSC080N03LSG датащи(HTML) 2 Page - Infineon Technologies AG

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BSC080N03LS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Power dissipation
P tot
T C=25 °C
35
W
T A=25 °C,
R thJA=50 K/W
2)
2.5
Operating and storage temperature
T j, T stg
-55 ... 150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
-
-
3.6
K/W
top
-
-
20
Device on PCB
R thJA
6 cm
2 cooling area2)
--
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1
-
2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=30 A
-
9.6
12
m
Ω
V GS=10 V, I D=30 A
-
6.7
8
Gate resistance
R G
0.5
1.0
1.8
Ω
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
30
59
-
S
3) See figure 3 for more detailed information
Value
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.25
page 2
2009-11-03



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