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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRGI4064DPBF датащи(PDF) 2 Page - International Rectifier |
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IRGI4064DPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRGI4064DPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 28µH, RG = 90Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA e CT6 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.52 — V/°C VGE = 0V, IC = 100µA (-55°C-150°C) CT6 — 1.51 1.80 IC = 8.0A, VGE = 15V, TJ = 25°C 5,6,7 VCE(on) Collector-to-Emitter Saturation Voltage — 1.73 — V IC = 8.0A, VGE = 15V, TJ = 125°C 9,10,11 —1.80 — IC = 8.0A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 275µA 9, 10, ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -12 — mV/°C VCE = VGE, IC = 1.0mA (-55°C - 150°C) 11, 12 gfe Forward Transconductance — 6.5 — S VCE = 50V, IC = 8.0A, PW = 60µs ICES Collector-to-Emitter Leakage Current — — 20 µA VGE = 0V, VCE = 600V —— 250 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 2.23 3.1 V IF = 8.0A 8 —1.64 — IF = 8.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 21 32 IC = 8.0A 24 Qge Gate-to-Emitter Charge (turn-on) — 4.8 7.2 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 8.6 13 VCC = 400V Eon Turn-On Switching Loss — 20 25 IC = 8.0A, VCC = 400V, VGE = 15V CT4 Eoff Turn-Off Switching Loss — 125 137 µJ RG = 22 Ω, L = 1.0mH, TJ = 25°C Etotal Total Switching Loss — 145 162 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 29 38 IC = 8.0A, VCC = 400V, VGE = 15V CT4 tr Rise time — 12 17 ns RG = 22 Ω, L = 1.0mH, TJ = 25°C td(off) Turn-Off delay time — 84 90 tf Fall time — 18 23 Eon Turn-On Switching Loss — 51 — IC = 8.0A, VCC = 400V, VGE=15V 13, 15 Eoff Turn-Off Switching Loss — 205 — µJ RG=22 Ω, L=1.0mH, TJ = 150°C eà CT4 Etotal Total Switching Loss — 256 — Energy losses include tail & diode reverse recovery WF1, WF2 td(on) Turn-On delay time — 28 — IC = 8.0A, VCC = 400V, VGE = 15V 14, 16 tr Rise time — 12 — ns RG = 22 Ω, L = 1.0mH CT4 td(off) Turn-Off delay time — 101 — TJ = 150°C WF1 tf Fall time — 27 — WF2 Cies Input Capacitance — 600 — pF VGE = 0V 23 Coes Output Capacitance — 45 — VCC = 30V Cres Reverse Transfer Capacitance — 16 — f = 1.0Mhz TJ = 150°C, IC = 32A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 90 Ω, VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp =600V 22, CT3 Rg = 90 Ω, VGE = +15V to 0V WF4 Erec Reverse Recovery Energy of the Diode — 147 — µJ TJ = 150°C 17, 18, 19 trr Diode Reverse Recovery Time — 48 — ns VCC = 400V, IF = 8.0A 20, 21 Irr Peak Reverse Recovery Current — 14 — A VGE = 15V, Rg = 22 Ω, L = 1.0mH WF3 Conditions |
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