IRF1324LPBF datasheet(2/10 Pages) IRF

2 / 10 page

IRF1324S/LPbF

www.irf.com

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

(Refer to AN-1140).

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.014mH

RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use

above this value.

ISD ≤ 195A, di/dt ≤ 450A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-

mended footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

––– mV/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

1.3

1.65

Ω

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

IDSS

Drain-to-Source Leakage Current

–––

µA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

200

Gate-to-Source Reverse Leakage

–––

-200

Internal Gate Resistance

–––

2.3

–––

Ω

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

180

–––

Total Gate Charge

–––

160

240

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

190

–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––

120

–––

Ciss

Input Capacitance

–––

7590

–––

Coss

Output Capacitance

–––

3440

–––

Crss

Reverse Transfer Capacitance

–––

1960

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 4700 –––

Coss eff. (TR) Effective Output Capacitance (Time Related)

–––

4490

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

––– 350

(Body Diode)

ISM

Pulsed Source Current

–––

1420

(Body Diode)

Ãd

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 20V,

–––

TJ = 125°C

IF = 195A

Qrr

Reverse Recovery Charge

–––

160

–––

nC TJ = 25°C

di/dt = 100A/µs

–––

430

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

7.7

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VDS = 10V, ID = 195A

ID = 195A

VGS = 20V

VGS = -20V

MOSFET symbol

showing the

VDS = 12V

Conditions

VGS = 10V

VGS = 0V

VDS = 24V

ƒ = 1.0 MHz, See Fig. 5

VGS = 0V, VDS = 0V to 19V i, See Fig. 11

VGS = 0V, VDS = 0V to 19V

TJ = 25°C, IS = 195A, VGS = 0V g

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 5.0mAd

VGS = 10V, ID = 195A

VDS = VGS, ID = 250µA

VDS = 24V, VGS = 0V

VDS = 24V, VGS = 0V, TJ = 125°C

ID = 195A

RG = 2.7Ω

VGS = 10V g

VDD = 16V

ID = 195A, VDS =0V, VGS = 10V

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