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SPP18P06P датащи(PDF) 2 Page - Infineon Technologies AG

номер детали SPP18P06P
подробное описание детали  SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode
PDF  9 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPP18P06P датащи(HTML) 2 Page - Infineon Technologies AG

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SPP18P06P
G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance,
junction - case
R thJC
-
-
1.85
K/W
Thermal resistance,
junction - ambient, leaded
R thJA
--
62
SMD version, device on PCB:
R thJA
minimal footprint
-
-
62
K/W
6 cm
2 cooling area1)
--
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250 µA
-60
-
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-
1000 µA
-2.1
2.7
-4
Zero gate voltage drain current
I DSS
V DS=-60 V, V GS=0 V,
T j=25 °C
-
-0.1
-1
µA
V DS=-60 V, V GS=0 V,
T j=150 °C
-
-10
-100
Gate-source leakage current
I GSS
V GS=-20 V, V DS=0 V
-
-10
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-10 V, I D=-13.2 A
-
102
130
m
Ω
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-13.2 A
510
-
S
1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical without blown air.
Values
Rev1.
8
page 2
200
9-04-14



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