SPD04P10PLG datasheet(1/9 Pages) INFINEON

номер детали	SPD04P10PLG

подробное описание детали	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode

PDF	9 Pages

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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SPD04P10PL G

SIPMOS® Power-Transistor

Features

• P-Channel

• Enhancement mode

• Logic level

• Avalanche rated

• Pb-free lead plating; RoHS compliant

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=-4.2 A, R GS=25 Ω

mJ

Gate source voltage

V GS

V

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

ESD class

JESD22-

A114-HBM

Soldering temperature

IEC climatic category; DIN IEC 68-1

-4.2

3.0

38

Value

57

-16.8

steady state

55/175/56

-55 ... 175

±20

260 °C

1A (250 V to 500 V)

V DS

-100

V

R DS(on),max

850

m

Ω

I D

-4.2

A

Product Summary

Type

Package

Marking

Lead free

Packing

SPD04P10PL G PG-TO252-3

04P10PL

Yes

Non dry

PG-TO-252

-3

Rev 1.

5

page 1

200

9-02-16

Tape and reel information

1000 pcs / reel

Аналогичный номер детали - SPD04P10PLG

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SPD04P10PLG датащи(PDF) 1 Page - Infineon Technologies AG

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Аналогичный номер детали - SPD04P10PLG

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