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TLE4946-2L датащи(PDF) 8 Page - Infineon Technologies AG |
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TLE4946-2L датащи(HTML) 8 Page - Infineon Technologies AG |
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8 / 12 page ![]() Datasheet 8 Rev 1.0, 2008-06 TLE4946-2L Specification 3 Specification 3.1 Application Circuit VS Q GND 200 Ω VS GND Q Figure 5 Application circuit It is recommended to use a serial resistor of 200 Ω in the supply line for current limitation in the case of a overvoltage pulse. Two capacitors of 4.7nF enhance the EMC performance. The pull-up resistor of 1.2k Ω limits the current through the output transistor. 3.2 Absolute Maximum Ratings Table 2 Absolute Maximum Ratings Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Max. junction temperature T J -40 – 150 °C – – 155 for 2000 h (not additive) – – 165 for 1000 h (not additive – – 175 for 168 h (not additive) – – 195 for 3 x 1 h (additive) Supply voltage V DD -18 -18 -18 – – – 18 24 26 V for 1h, Rs ≥ 200Ω for 5min, Rs ≥ 200Ω Supply current through protection device IS – 50 – + 50 mA Output voltage VQ -0.7 – 18 V -0.7 – 26 for 5min @ 1.2k Ω pull up Storage temperature TS – 40 – 150 °C Magnetic flux density B – unlimited mT ESD robustness HBM: 1.5 k Ω, 100 pF V ESD,HBM 4 kV According to EIA/JESD22-A114-B |
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