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BSP372 датащи(PDF) 2 Page - Infineon Technologies AG

номер детали BSP372
подробное описание детали  SIPMOS Small-Signal Transistor
PDF  9 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSP372 датащи(HTML) 2 Page - Infineon Technologies AG

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BSP372
Rev 2.0
2
2008-03-31
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Tj
-55 ... + 150
˚C
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air 1)
RthJA
≤ 70
K/W
Thermal resistance, junction-soldering point 1)
RthJS
≤ 10
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics,
at Tj = 25˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C
V(BR)DSS
100
-
-
V
Gate threshold voltage
VGS=VDS, ID = 1 mA
VGS(th)
0.8
1.4
2
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V, Tj = 25 ˚C
VDS = 100 V, VGS = 0 V, Tj = 125 ˚C
IDSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS
-
10
100
nA
Drain-Source on-state resistance
VGS = 5 V, ID = 1.7 A
RDS(on)
-
0.24
0.31
Ω



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