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BFP720 датащи(PDF) 17 Page - Infineon Technologies AG

номер детали BFP720
подробное описание детали  C Heterojunction Wideband RF Bipolar Transistor
PDF  26 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP720 датащи(HTML) 17 Page - Infineon Technologies AG

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BFP720
Electrical Characteristics
Data Sheet
17
Revision 1.0, 2009-01-20
Table 12
AC Characteristics,
V
CE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
G
ms
G
ms
–
22
25
–dB
I
C =5mA
I
C =13mA
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
S
21
S
21
–
20.5
23
–dB
Z
S = ZL =50 Ω
I
C =5mA
I
C =13mA
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
NF
min
G
ass
–
0.5
21.5
–dB
Z
S = Zopt
I
C =5mA
I
C =5mA
Linearity
1 dB Gain Compression Point
3rd Order Intercept Point
OP
1dB
OIP
3
–
6
22
–dBm
Z
S = ZL =50 Ω
I
C =13mA
I
C =13mA
Table 13
AC Characteristics,
V
CE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
G
ms
G
ms
–
20.5
23.5
–dB
I
C =5mA
I
C =13mA
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
S
21
S
21
–
18.5
20
–dB
Z
S = ZL =50 Ω
I
C =5mA
I
C =13mA
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
NF
min
G
ass
–
0.55
19
–dB
Z
S = Zopt
I
C =5mA
I
C =5mA
Linearity
1 dB Gain Compression Point
3rd Order Intercept Point
OP
1dB
OIP
3
–
7.5
22.5
–dBm
Z
S = ZL =50 Ω
I
C =13mA
I
C =13mA



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