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BCR523 датащи(PDF) 2 Page - Infineon Technologies AG

номер детали BCR523
подробное описание детали  NPN Silicon Digital Transistors
PDF  8 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BCR523 датащи(HTML) 2 Page - Infineon Technologies AG

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2007-07-24
2
BCR523...
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
BCR523
BCR523U
RthJS
≤ 215
≤ 105
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO
50
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO
50
-
-
Collector-base cutoff current
VCB = 50 V, IE = 0
ICBO
-
-
100
nA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO
-
-
0.72 mA
DC current gain-
IC = 50 mA, VCE = 5 V
hFE
70
-
-
-
Collector-emitter saturation voltage3)
IC = 50 mA, IB = 2.5 mA
VCEsat
-
-
0.3
V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off)
0.3
-
1
Input on voltage
IC = 10 mA, VCE = 0.3 V
Vi(on)
0.4
-
1.4
Input resistor
R1
0.7
1
1.3
k
Ω
Resistor ratio
R1/R2
0.09
0.1
0.11
-
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT
-
100
-
MHz
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
3Pulse test: t < 300µs; D < 2%



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