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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BAW79D датащи(PDF) 2 Page - Infineon Technologies AG |
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BAW79D датащи(HTML) 2 Page - Infineon Technologies AG |
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2 / 6 page  2007-04-20 2 BAW78.../BAW79... Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BAW78D BAW79D RthJS ≤ 25 ≤ 35 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 100 µA V(BR) 400 - - V Reverse current VR = 400 V VR = 400 V, TA = 150 °C IR - - - - 1 50 µA Forward voltage IF = 1 A IF = 2 A VF - - - - 1.6 2 V AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz CT - 10 - pF Reverse recovery time IF = 200mA, IR = 200mA, measured at IR = 20mA , RL = 100Ω trr - 1 - µs Test circuit for reverse recovery time EHN00019 Ι F D.U.T. Oscillograph Puls generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograp: R = 50 Ω, t r = 0.35ns C ≤ 1pF 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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