R8C2A datasheet(39/66 Pages) RENESAS

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R8C/2A Group, R8C/2B Group

5. Electrical Characteristics

Rev.2.10

Nov 26, 2007

Page 37 of 60

REJ03B0182-0210

NOTES:

VCC = 2.7 to 5.5 V at Topr = 0 to 60

°C, unless otherwise specified.

Definition of programming/erasure endurance

The programming and erasure endurance is defined on a per-block basis.

If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024

1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance

still stands at one.

However, the same address must not be programmed more than once per erase operation (overwriting prohibited).

Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential

addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,

when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups

before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the

number of erase operations to a certain number.

If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase

command at least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact their Renesas technical support representative.

The data hold time includes time that the power supply is off or the clock is not supplied.

Table 5.5

Flash Memory (Program ROM) Electrical Characteristics

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

−

Program/erase endurance(2)

R8C/2A Group

100(3)

−−

times

R8C/2B Group

1,000(3)

−−

times

−

Byte program time

−

400

µs

−

Block erase time

−

0.4

td(SR-SUS)

Time delay from suspend request until

suspend

−−

97+CPU clock

× 6 cycles

µs

−

Interval from erase start/restart until

following suspend request

650

−−

µs

−

Interval from program start/restart until

following suspend request

−−

−

Time from suspend until program/erase

restart

−−

3+CPU clock

× 4 cycles

µs

−

Program, erase voltage

2.7

−

5.5

−

Read voltage

2.2

−

5.5

−

Program, erase temperature

−

°C

−

Data hold time(7)

Ambient temperature = 55

°C20

−−

year

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