BLF871_2

© NXP B.V. 2009. All rights reserved.

Preliminary data sheet

Rev. 02 — 5 March 2009

2 of 18

NXP Semiconductors

BLF871

UHF power LDMOS transistor

(RoHS)

1.3 Applications

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

drain

2

gate

3

source

[1]

1

2

3

sym112

1

3

2

Table 3.

Ordering information

Type number Package

Name Description

Version

BLF871

-

flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

89

V

gate-source voltage

−0.5

+13

V

storage temperature

−65

+150

°C

junction temperature

-

200

°C