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STP9NM50N датащи(PDF) 5 Page - STMicroelectronics

номер детали STP9NM50N
подробное описание детали  N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™Power MOSFET
PDF  17 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP9NM50N датащи(HTML) 5 Page - STMicroelectronics

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Obsolete
Product(s)
- Obsolete
Product(s)
STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N
Electrical characteristics
5/17
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=250V, ID=3.7A,
RG=4.7Ω, VGS=10V
(see Figure 15)
11
16
45
19
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
7.5
30
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD=7.5A, VGS=0
1.2
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=7.5A, di/dt=100A/µs,
VDD=100V, Tj=150°C
(see Figure 17)
420
3
14
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=7.5A, di/dt=100A/µs,
VDD=100V, Tj= 25°C
(see Figure 17)
280
2
14
ns
µC
A



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