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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STD26NF10 датащи(PDF) 3 Page - STMicroelectronics |
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STD26NF10 датащи(HTML) 3 Page - STMicroelectronics |
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3 / 13 page  STD26NF10 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VDGR Drain-gate voltage (RGS = 20 kΩ)100 V VGS Gate- source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25°C 25 A ID Drain current (continuous) at TC = 100°C 21 A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 100 A Ptot Total dissipation at TC = 25°C 100 W Derating Factor 0.67 W/°C dv/dt(3) 3. ISD ≤35A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤TJMAX Peak diode recovery avalanche energy 13 V/ns EAS (4) 4. Starting Tj = 25 °C, ID = 12.5A VDD = 50V Single pulse avalanche energy 480 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.5 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W TJ Maximum lead temperature for soldering purpose 300 °C |
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