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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STF8NM60N датащи(PDF) 5 Page - STMicroelectronics |
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STF8NM60N датащи(HTML) 5 Page - STMicroelectronics |
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5 / 19 page  STx8NM60N Electrical characteristics 5/19 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18), (see Figure 23) 10 12 40 10 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 7 28 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 7 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs, VDD = 30 V, Tj = 25 °C (see Figure 20) 310 2.40 15 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7A, di/dt = 100 A/µs, VDD = 30 V, Tj=150°C (see Figure 20) 480 3.50 15 ns µC A |
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