Electrical characteristics

STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z

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Doc ID 9565 Rev 6

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Source-drain current

-

2.5

A

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

10

A

(2)

2.

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward on voltage

-

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt = 100 A/µs,

(see

-

384

1600

8.4

ns

µC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt = 100 A/µs,

(see

-

474

2100

8.8

ns

µC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Gate-source breakdown voltage Igs=± 1mA (open drain)

30

-

-

V