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STF7NK30Z датащи(PDF) 3 Page - STMicroelectronics

номер детали STF7NK30Z
подробное описание детали  N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™Power MOSFET
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STF7NK30Z датащи(HTML) 3 Page - STMicroelectronics

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STx7NK30Z
Electrical characteristics
3/15
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID =1 mA, VGS = 0
300
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS=max rating
VDS=max rating @125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.5 A
0.80
0.90
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward transconductance VDS =15 V, ID = 2.5 A
2.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1MHz,
VGS = 0
380
74
15
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Equivalent output
capacitance
VGS = 0, VDS = 0 to 240 V
30
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 240 V, ID = 7 A,
VGS = 10 V
Figure 16
13
4.5
7.6
17
nC
nC
nC



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