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STN1NK60Z датащи(PDF) 4 Page - STMicroelectronics

номер детали STN1NK60Z
подробное описание детали  N-channel 600V - 13Ω - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH™Power MOSFET
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STN1NK60Z датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
600
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
10
µA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 50µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 0.4A
13
15
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID = 0.4A
0.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
94
17.6
2.8
pF
pF
pF
Coss eq
(2)
.
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 480V
11
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=480V, ID = 0.8A
VGS =10V
(see Figure 21)
4.9
1
2.7
6.9
nC
nC
nC



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